Material-Ultrafast Laser Interaction
This application involves a simulation based on a modified Boltzmann
model describing the carrier dynamics developed in a semiconductor
following an excitation by an ultrashort laser pulse. The model uses
four coupled diffusion equations describing carrier dynamics, carrier
temperatures and lattice temperature development through the emmision of
phonons.
Contact: Loukas Loumakos: loumakos@ucy.ac.cy
Department of Physics, UCY
